Study of the effect of different gases parameter in dry etching process on etch rate profile

The principal focus of this project is dry etching technique by using the Inductively Couple Plasma -Reactive Ion Etching (ICP-RIE). This final year project is about to understand and control the equipment for dry etches process. The equipment in dry etch process is inductively couple plasma- reacti...

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Autor principal: Zaharah Mohamad (Author)
Formato: Recurso Electrónico Software Base de Dados
Idioma:English
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Resumo:The principal focus of this project is dry etching technique by using the Inductively Couple Plasma -Reactive Ion Etching (ICP-RIE). This final year project is about to understand and control the equipment for dry etches process. The equipment in dry etch process is inductively couple plasma- reactive ion etching (ICP-RIE).
Descrição do item:Final Year Project
Descrição Física:1 CD-ROM 4 3/4 in.