Study of the effect of different gases parameter in dry etching process on etch rate profile

The principal focus of this project is dry etching technique by using the Inductively Couple Plasma -Reactive Ion Etching (ICP-RIE). This final year project is about to understand and control the equipment for dry etches process. The equipment in dry etch process is inductively couple plasma- reacti...

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Autore principale: Zaharah Mohamad (Autore)
Natura: Elettronico Software Database
Lingua:English
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LEADER 01369nmi a2200241 a 4500
001 vtls000051365
003 MY-KaKUK
005 20210816100358.0
007 co bg llla a
008 111129s2008 my f d 000 0 eng d
039 9 |a 201111291743  |b VLOAD  |c 201111161333  |d VLOAD  |c 201007271024  |d AYAR  |c 200909250937  |d ABO  |y 200904151400  |z SNSA 
090 0 0 |a TK7874  |b M7Z19 2008 
100 0 |a Zaharah Mohamad.  |e author 
245 1 0 |a Study of the effect of different gases parameter in dry etching process on etch rate profile  |h [electronic resource] /  |c Zaharah Mohamad. 
264 0 |a Kangar, Perlis  |b School of Microelectronic Engineering, Universiti Malaysia Perlis  |c 2008. 
300 |a 1 CD-ROM  |c 4 3/4 in. 
500 |a Final Year Project 
520 |a The principal focus of this project is dry etching technique by using the Inductively Couple Plasma -Reactive Ion Etching (ICP-RIE). This final year project is about to understand and control the equipment for dry etches process. The equipment in dry etch process is inductively couple plasma- reactive ion etching (ICP-RIE). 
650 0 |a Microelectronics. 
949 |a VIRTUAITEM  |d 30000  |f 1  |x 701  |6 902000253  |a TK7874 M7Z19 2008 
942 |2 lcc  |c COMPFILE 
999 |c 93562  |d 93562 
952 |0 0  |1 0  |2 lcc  |4 0  |6 TK7874 M7 Z19 02008  |7 0  |9 91300  |a PTSFP  |b PTSFP  |c 8  |d 2021-08-16  |l 0  |o TK7874 M7Z19 2008  |p 902000253  |r 2021-08-16  |t 1  |w 2021-08-16  |y COMPFILE