Study of the effect of different gases parameter in dry etching process on etch rate profile
The principal focus of this project is dry etching technique by using the Inductively Couple Plasma -Reactive Ion Etching (ICP-RIE). This final year project is about to understand and control the equipment for dry etches process. The equipment in dry etch process is inductively couple plasma- reacti...
Sábháilte in:
Príomhchruthaitheoir: | Zaharah Mohamad (Údar) |
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Formáid: | Leictreonach Bogearraí Bunachar sonraí |
Teanga: | English |
Ábhair: | |
Clibeanna: |
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Míreanna comhchosúla
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Reactive ion etching (RIE) etched wet-silica-on-silicon analysis for fluidwettability
de réir: Noor Aini Hamimah Abd. Rahim -
Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM
de réir: Nur Syuhada Md. Desa -
Comparison of etching optimization process by taguchi method using minitab and design expert software
de réir: Azleen Abu Talib -
Dry Etching Technology for Semiconductors /
de réir: Nojiri, Kazuo
Foilsithe / Cruthaithe: (2015) -
Design and fabricate "wineglass" contact formation by simultaneous wet-dry etch process.
de réir: Mohd Norhafiz Bin. Hashim