Study of the effect of different gases parameter in dry etching process on etch rate profile
The principal focus of this project is dry etching technique by using the Inductively Couple Plasma -Reactive Ion Etching (ICP-RIE). This final year project is about to understand and control the equipment for dry etches process. The equipment in dry etch process is inductively couple plasma- reacti...
Saved in:
主要作者: | Zaharah Mohamad (Author) |
---|---|
格式: | 電子 軟件 Database |
語言: | English |
主題: | |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Reactive ion etching (RIE) etched wet-silica-on-silicon analysis for fluidwettability
由: Noor Aini Hamimah Abd. Rahim -
Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM
由: Nur Syuhada Md. Desa -
Comparison of etching optimization process by taguchi method using minitab and design expert software
由: Azleen Abu Talib -
Dry Etching Technology for Semiconductors /
由: Nojiri, Kazuo
出版: (2015) -
Design and fabricate "wineglass" contact formation by simultaneous wet-dry etch process.
由: Mohd Norhafiz Bin. Hashim