Ferroelectric random access memories : fundamentals and applications /
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Other Authors: | , , |
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Format: | Software eBook |
Language: | English |
Published: |
Berlin
Springer
2004.
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Series: | Topics in applied physics ;
v. 93. |
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Table of Contents:
- Overview / James F. Scott
- Novel si-substituted ferroelectric films / Takeshi Kijima and Hiroshi Ishiwara
- Static and dynamic properties of domains / Rainer Waser, Ulrich Bottger and Michael Grossmann
- Nanoscale phenomena in ferroelectric thin films / Valanoor Nagarajan, Chandan S. Ganpule and Ramamoorthy Ramesh
- sputtering technique / Koukou Suu
- chemical approach using liquid sources tailored to bi-based layer-structured perovskite thin films / Kazumi Kato
- Recent development in the preparation of ferroelectric thin films by MOCVD / Hiroshi Funakubo
- Materials integration strategies / Orlando Auciello, Anil M. Dhote, Bao T. Liu, Sanjeev Aggarwal and Ramamoorthy Ramesh
- Characterization by scanning nonlinear dielectric microscopy / Yasuo Cho
- current status of FeRAM / Glen R. Fox, Richard Bailey, William B. Kraus, Fan Chu, Shan Sun and Tom Davenport
- Operation principle and circuit design issues / Ali Sheikholeslami
- High-density integration / Kinam Kim
- Testing and reliability / Yasuhiro Shimada
- Chain FeRAMS / Daisaburo Takashima and Yukihito Oowaki
- Capacitor-on-metal/via-stacked-plug (CMVP) memory cell technologies and application to a nonvolatile SRAM / Hiromitsu Hada, Kazushi Amanuma, Tohru Miwa, Sota Kobayashi, Toru Tatsumi, Yukihiko Maejima, Junichi Yamada, Hiroki Koike, Hideo Toyoshima and Takemitsu Kunio
- FET-type FeRAM / Hiroshi Ishiwara
- Ferroelectric technologies for portable equipment / Yoshikazu Fujimori, Takashi Nakamura and Hidemi Takasu
- application of FeRAM to future information technology world / Shoichi Masui, Shunsuke Fueki, Koichi Masutani, Amane Inoue, Toshiyuki Teramoto, Tetsuo Suzuki and Shoichiro Kawashima.