Ferroelectric random access memories : fundamentals and applications /

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Bibliographic Details
Other Authors: Ishiwara, Hiroshi, 1945-, Okuyama, Masanori, 1946-, Arimoto, Yoshihiro, 1952-
Format: Software eBook
Language:English
Published: Berlin Springer 2004.
Series:Topics in applied physics ; v. 93.
Subjects:
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Table of Contents:
  • Overview / James F. Scott
  • Novel si-substituted ferroelectric films / Takeshi Kijima and Hiroshi Ishiwara
  • Static and dynamic properties of domains / Rainer Waser, Ulrich Bottger and Michael Grossmann
  • Nanoscale phenomena in ferroelectric thin films / Valanoor Nagarajan, Chandan S. Ganpule and Ramamoorthy Ramesh
  • sputtering technique / Koukou Suu
  • chemical approach using liquid sources tailored to bi-based layer-structured perovskite thin films / Kazumi Kato
  • Recent development in the preparation of ferroelectric thin films by MOCVD / Hiroshi Funakubo
  • Materials integration strategies / Orlando Auciello, Anil M. Dhote, Bao T. Liu, Sanjeev Aggarwal and Ramamoorthy Ramesh
  • Characterization by scanning nonlinear dielectric microscopy / Yasuo Cho
  • current status of FeRAM / Glen R. Fox, Richard Bailey, William B. Kraus, Fan Chu, Shan Sun and Tom Davenport
  • Operation principle and circuit design issues / Ali Sheikholeslami
  • High-density integration / Kinam Kim
  • Testing and reliability / Yasuhiro Shimada
  • Chain FeRAMS / Daisaburo Takashima and Yukihito Oowaki
  • Capacitor-on-metal/via-stacked-plug (CMVP) memory cell technologies and application to a nonvolatile SRAM / Hiromitsu Hada, Kazushi Amanuma, Tohru Miwa, Sota Kobayashi, Toru Tatsumi, Yukihiko Maejima, Junichi Yamada, Hiroki Koike, Hideo Toyoshima and Takemitsu Kunio
  • FET-type FeRAM / Hiroshi Ishiwara
  • Ferroelectric technologies for portable equipment / Yoshikazu Fujimori, Takashi Nakamura and Hidemi Takasu
  • application of FeRAM to future information technology world / Shoichi Masui, Shunsuke Fueki, Koichi Masutani, Amane Inoue, Toshiyuki Teramoto, Tetsuo Suzuki and Shoichiro Kawashima.