An optimization of gate leakage in scaled MOSFET on the effect of temperature during the metal gate annealing process in Gate-Last Technology

An optimization of gate leakage in scaled MOSFET on the effect of temperature during the metal gate annealing process in Gate-Last Technology

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Bibliographic Details
Main Author: Muhamad Nur Sadiq Sazali (Author)
Corporate Author: Universiti Teknikal Malaysia Melaka. Faculty of Electronic and Computer Engineering (institution)
Format: Thesis Book
Language:English
Published: 2017
Subjects:
Metal oxide semiconductor field-effect transistors.
Electronic circuit design.
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