Statistical modelling and optimization of input process parameters variations in silicon-on-insulator MOSFET device /
The steady miniaturization of the conventional (planar bulk) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been effective in providing continual improvements in integrated circuit performance. However, increased leakage current and variability in transistor performance are the m...
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| Format: | Book |
| Language: | English |
| Published: |
2017.
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Perpustakaan Laman Hikmah Kampus Induk, UTeM: 1
| Call Number: |
TK7871.95 .M52 2017 |
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| Copy Unknown | Available Place a Hold |