Optimization of 16nm double gate FinFET device for reduced variability and enhanced performance /
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Main Author: | |
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Format: | Book |
Language: | English |
Published: |
2018.
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LEADER | 01346pam a2200361 i 4500 | ||
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001 | 112628 | ||
003 | UTeM | ||
005 | 20190802083737.0 | ||
008 | 190425s2018 my ||||| |||| 00| | eng d | ||
999 | |c 112628 |d 112628 | ||
020 | |c gift | ||
040 | |a UTeM |b eng |c UTeM |e rda | ||
090 | 0 | 0 | |a TK7871 |b .N60 2018 |
100 | 0 | |a Nur Habibah Ismail, |e author. |9 1191 | |
245 | 1 | 0 | |a Optimization of 16nm double gate FinFET device for reduced variability and enhanced performance / |c Nur Habibah Ismail. |
264 | 1 | |c 2018. | |
300 | |a xii, 78 pages : |b some colour illustrations, charts, photographs ; |c 30 cm |e 1 computer disc (12 cm) | ||
336 | |a text |2 rdacontent | ||
336 | |a still image |2 rdacontent | ||
337 | |a unmediated |2 rdamedia | ||
338 | |a volume |2 rdacarrier | ||
504 | |a Reference : pages 76-78. | ||
650 | 0 | |a Field-effect transistors |x Computer simulation. |9 3554 | |
710 | 1 | |a Universiti Teknikal Malaysia Melaka, |e issuing body. |9 797 | |
720 | |a Dr. Fauziyah Salehuddin | ||
790 | |a Faculty of Electronic and Computer Engineering | ||
791 | |a Bachelor of Electronic Engineering | ||
792 | |a 2018 | ||
942 | |2 lcc |c UGP - A |k a | ||
996 | |a BENG | ||
997 | |a FKEKK | ||
998 | 0 | 0 | |a mez/020519 |
952 | |0 0 |1 0 |2 lcc |4 0 |6 TK7871 N60 02018 |7 0 |9 138888 |a PLHKI |b PLHKI |c 1 |d 2019-04-25 |o TK7871 .N60 2018 |p 87500313 |r 2019-04-25 |w 2019-04-25 |y UGP - A |