An investigation of device performance of 20 NM n-type mosfet using gate first and gate last technology /

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Bibliographic Details
Main Author: Ahmad Najmie Ahmad Shokri (Author)
Format: Software eBook
Language:English
Published: 2014.
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Description
Item Description:Accompanied by CD : CDR 11656.
Physical Description:xi, 65 pages : illustrations, charts, photographs ; 30 cm + 1 computer disc (12 cm)