Fundamentals of nanoscaled field effect transistors /
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl...
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| Format: | eBook |
| Language: | English |
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New York, NY
Springer New York
2013.
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| Online Access: | Click here to view the full text content |
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| Summary: | Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics. |
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| Physical Description: | 1 online resource (XIV, 201 pages) 121 illustration, 102 illustration in colour. |
| ISBN: | 9781461468226 |