Vibrational properties of defective oxides and 2D nanolattices : insights from first-principles simulations /

Ge and III-V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials - like graphene and MoS_2 - are also envisioned to replace Si in the future.   This thesis is devoted to the first-principles modeling of the vibrational prop...

Full description

Saved in:
Bibliographic Details
Main Author: Scalise, Emilio (Author)
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: Cham Springer International Publishing 2014.
Series:Springer Theses, Recognizing Outstanding Ph.D. Research
Subjects:
Online Access:Click here to view the full text content
Tags: Add Tag
No Tags, Be the first to tag this record!

System Under Maintenance

Our Library Management System is currently under maintenance.

Holdings and item availability information is currently unavailable. Please accept our apologies for any inconvenience this may cause and contact us for further assistance:

david@pintaran.my

Internet

Click here to view the full text content