Vibrational properties of defective oxides and 2D nanolattices : insights from first-principles simulations /
Ge and III-V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials - like graphene and MoS_2 - are also envisioned to replace Si in the future. This thesis is devoted to the first-principles modeling of the vibrational prop...
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| Formaat: | E-boek |
| Taal: | English |
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Cham
Springer International Publishing
2014.
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| Reeks: | Springer Theses, Recognizing Outstanding Ph.D. Research
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| Online toegang: | Click here to view the full text content |
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