Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM

The scope of this final year project is to get a high aspect ratio for etch profile using wet etching technique. After etching process using Buffered Oxide Etch (BOE), the structure profile had to viewed under profiler meter, Atomic Forces Microscopy (AFM) Scanning Electron Microscope (SEM).

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Библиографические подробности
Главный автор: Nur Syuhada Md. Desa (Автор)
Формат: Электронный ресурс Программное обеспечение База данных
Язык:English
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Итог:The scope of this final year project is to get a high aspect ratio for etch profile using wet etching technique. After etching process using Buffered Oxide Etch (BOE), the structure profile had to viewed under profiler meter, Atomic Forces Microscopy (AFM) Scanning Electron Microscope (SEM).
Примечание:Final Year Project
Объем:1 CD-ROM 4 3/4 in.