Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM
The scope of this final year project is to get a high aspect ratio for etch profile using wet etching technique. After etching process using Buffered Oxide Etch (BOE), the structure profile had to viewed under profiler meter, Atomic Forces Microscopy (AFM) Scanning Electron Microscope (SEM).
Uloženo v:
Hlavní autor: | Nur Syuhada Md. Desa (Autor) |
---|---|
Médium: | Elektronický zdroj Program Databáze |
Jazyk: | English |
Témata: | |
Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|
Podobné jednotky
-
Reactive ion etching (RIE) etched wet-silica-on-silicon analysis for fluidwettability
Autor: Noor Aini Hamimah Abd. Rahim -
Study of the effect of different gases parameter in dry etching process on etch rate profile
Autor: Zaharah Mohamad -
MIMOS Semiconductor (M) Sdn. Bhd. (MySem)
Autor: Mohammad Hifzan Saibudin -
Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method
Autor: Mohamad Fadzli Ali -
Nanostructure formation using sem based e-beam lithography (EBL) technique : buffered oxide etch (BOE) profile
Autor: Nur Nazihah Halemi