Theoretical study, simulation & fabrication on dry oxidation in terms of Si02 layer thinckness, resistivity & surface roughness
This final year project focused on four goals and the aims for the project are: to study the dry oxidation process and characteristics, to grow a thin layer of Silicon oxide (SiO2), to determine the better parameter for dry oxidation, and to prepare a result as the reference for future experimental.
Saved in:
Main Author: | |
---|---|
Format: | Electronic Software Database |
Language: | English |
Subjects: | |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
System Under Maintenance
Our Library Management System is currently under maintenance.
Holdings and item availability information is currently unavailable. Please accept our apologies for any inconvenience this may cause and contact us for further assistance: