Theoretical study, simulation & fabrication on dry oxidation in terms of Si02 layer thinckness, resistivity & surface roughness
This final year project focused on four goals and the aims for the project are: to study the dry oxidation process and characteristics, to grow a thin layer of Silicon oxide (SiO2), to determine the better parameter for dry oxidation, and to prepare a result as the reference for future experimental.
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| Language: | English |
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