Theoretical study, simulation & fabrication on dry oxidation in terms of Si02 layer thinckness, resistivity & surface roughness
This final year project focused on four goals and the aims for the project are: to study the dry oxidation process and characteristics, to grow a thin layer of Silicon oxide (SiO2), to determine the better parameter for dry oxidation, and to prepare a result as the reference for future experimental.
Zapisane w:
| 1. autor: | |
|---|---|
| Format: | Elektroniczne Oprogramowanie Baza danych |
| Język: | English |
| Hasła przedmiotowe: | |
| Etykiety: |
Dodaj etykietę
Nie ma etykietki, Dołącz pierwszą etykiete!
|
| Streszczenie: | This final year project focused on four goals and the aims for the project are: to study the dry oxidation process and characteristics, to grow a thin layer of Silicon oxide (SiO2), to determine the better parameter for dry oxidation, and to prepare a result as the reference for future experimental. |
|---|---|
| Deskrypcja: | Final Year Project |
| Opis fizyczny: | 1 CD-ROM 4 3/4 in. |