Investigation and modelling of boron diffusion reduction in silicon by fluorine implantation using numerical simulation
TThe objective of this project is to investigate the reduction of both the boron thermal diffusion and transient enhanced diffusion in silicon by fluorine implantation at the silicon surface.
Spremljeno u:
Glavni autor: | |
---|---|
Format: | Elektronički Softver Baza podataka |
Jezik: | English |
Teme: | |
Oznake: |
Dodaj oznaku
Bez oznaka, Budi prvi tko označuje ovaj zapis!
|
Budi prvi tko komentira!