Simulation of 0.35 Um NMOS process based on UniMAP Cleanroom facilities

The goal of this project is to simulate a 0.35um negative-metal-oxide-semiconductor (NMOS) process based on UniMAP cleanroom facilities and to study the feasibility of adopting this process using cleanroom facilities. The result of the simulation will be compared with UC Berkeley 0.35um process desi...

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主要作者: Izny Atikah Ahmad Fahmi (Author)
格式: 电子 软件 数据库
语言:English
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