Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization
This final year project cover of fabrication and simulation of pnp bipolar transistor based on electrical characterization and dopant concentration. From fabrication, the process will began from design mask layout, ion implantation, photolithography, diffusion and metallization. Then, a four point p...
Αποθηκεύτηκε σε:
Κύριος συγγραφέας: | Nursyida Azuddin (Συγγραφέας) |
---|---|
Μορφή: | Ηλεκτρονική πηγή Λογισμικό Βάση Δεδομένων |
Γλώσσα: | English |
Θέματα: | |
Ετικέτες: |
Προσθήκη ετικέτας
Δεν υπάρχουν, Καταχωρήστε ετικέτα πρώτοι!
|
Παρόμοια τεκμήρια
-
Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique
ανά: Mohd Rosydi Zakaria -
Fabrication of 50 ¡Łm transistor and AINiAu interconnection process
ανά: Shaffie Husin -
Simulation, fabrication and electrical characterization of p-Si capacitor design structure
ανά: Cherly, She Siew Yuet -
The study on the effect of varing dopant concentration and diffusion time in the design of silicon avalanche diode with minimum VBR of 120+-20%
ανά: Yip, Siew Ling -
The effect of annealing temperature and dopant concentration on the surface layer of vanadium doped barium strontium titanate (BVST) thin film
ανά: Siti Norhaida Abdul Rahman