Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method

Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method

This final year project focused on four goals: to study the dry and wet oxidation thickness, to grow a thin layer of silicon dioxide (SiO2) on Si wafer, to determine the parameter required for thickness needed, and to compare with the simulation and theoretical thickness to achieve the most accurate...

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書誌詳細
第一著者:	Mohamad Fadzli Ali (著者)
フォーマット:	電子媒体ソフトウェアデータベース
言語:	English
主題:	Microelectronics.
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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