Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method

Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method

This final year project focused on four goals: to study the dry and wet oxidation thickness, to grow a thin layer of silicon dioxide (SiO2) on Si wafer, to determine the parameter required for thickness needed, and to compare with the simulation and theoretical thickness to achieve the most accurate...

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Библиографические подробности
Главный автор:	Mohamad Fadzli Ali (Автор)
Формат:	Электронный ресурс Программное обеспечение База данных
Язык:	English
Предметы:	Microelectronics.
Метки:	Добавить метку Нет меток, Требуется 1-ая метка записи!

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