Study of the effect of different gases parameter in dry etching process on etch rate profile
The principal focus of this project is dry etching technique by using the Inductively Couple Plasma -Reactive Ion Etching (ICP-RIE). This final year project is about to understand and control the equipment for dry etches process. The equipment in dry etch process is inductively couple plasma- reacti...
में बचाया:
मुख्य लेखक: | Zaharah Mohamad (लेखक) |
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स्वरूप: | इलेक्ट्रोनिक सॉफ्टवेयर डेटाबेस |
भाषा: | English |
विषय: | |
टैग : |
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समान संसाधन
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Reactive ion etching (RIE) etched wet-silica-on-silicon analysis for fluidwettability
द्वारा: Noor Aini Hamimah Abd. Rahim -
Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM
द्वारा: Nur Syuhada Md. Desa -
Comparison of etching optimization process by taguchi method using minitab and design expert software
द्वारा: Azleen Abu Talib -
Dry Etching Technology for Semiconductors /
द्वारा: Nojiri, Kazuo
प्रकाशित: (2015) -
Design and fabricate "wineglass" contact formation by simultaneous wet-dry etch process.
द्वारा: Mohd Norhafiz Bin. Hashim