Minimum leakage current optimization on 22 nm Hafnium Dioxide (HfO2)/Tungsten Silicide (WSIx)/graphene with silicon on insulator (SOI) using Taguchi method /

Minimum leakage current optimization on 22 nm Hafnium Dioxide (HfO2)/Tungsten Silicide (WSIx)/graphene with silicon on insulator (SOI) using Taguchi method /

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Bibliographic Details
Main Author: Eliya Nabila Firhat (Author)
Format: Software eBook
Language:English
Published: 2019.
Subjects:
Silicon-on-insulator technology.
Integrated circuits.
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