Investigation and modelling of boron diffusion reduction in silicon by fluorine implantation using numerical simulation
TThe objective of this project is to investigate the reduction of both the boron thermal diffusion and transient enhanced diffusion in silicon by fluorine implantation at the silicon surface.
Sábháilte in:
| Príomhchruthaitheoir: | |
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| Formáid: | Leictreonach Bogearraí Bunachar sonraí |
| Teanga: | English |
| Ábhair: | |
| Clibeanna: |
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