Investigation and modelling of boron diffusion reduction in silicon by fluorine implantation using numerical simulation
TThe objective of this project is to investigate the reduction of both the boron thermal diffusion and transient enhanced diffusion in silicon by fluorine implantation at the silicon surface.
Salvato in:
| Autore principale: | |
|---|---|
| Natura: | Elettronico Software Database |
| Lingua: | English |
| Soggetti: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|
Lascia un commento!